be discussed. These are the advantages, disadvantages and applications of Gunn diode. Gunn diodes can be made from the materials which consist of multiple, initially-empty, closely-spaced energy valleys in their conduction band like Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Nitride (GaN), Cadmium Telluride (CdTe), Cadmium Sulfide (CdS), Indium Arsenide (InAs), Indium Antimonide (InSb) and Zinc Selenide (ZnSe). Gunn Diode Basics 3. Although the Gunn diode is normally used for generating microwave RF signals, the Gunn diode may also be used for an amplifier in what may be known as a transferred electron amplifier or TEA. In this regard, tunnel diode acts like a negative resistance, whereas a… The Gunn Effect can be defined as generation of microwave power (power with microwave frequencies of around a few GHz) whenever the voltage applied to a semiconductor device exceeds the critical voltage value or threshold voltage value. Applications of Gunn Diode: Gunn diodes are generally used in power oscillators in microwave instruments. Disadvantages of Gunn Diode: It is thermal sensitive hence require heat sinks. The coupling to the waveguide is through the post. Like the more familiar IMPATT diode, the BARITT is used in microwave signal generation, often in applications including burglar alarms and the like, where it can easily produce a simple microwave signal with a relatively low noise level. It is also used extensively in microwave relay data link transmitters. They are used as pump sources in parametric amplifiers. It provides a stabilized voltage for protection of circuits from overvoltage. GUNN Diode Applications. Gunn diode LSA mode: LSA mode in Gunn diode produces several watts of power at a minimum efficiency of about 20%. Similarly, if the voltage decreases, then the resistance will decrease by extinguishing any existing slice. The main difference between BARITT Diode and other Diode is that BARITT uses thermionic emission whereas other … Application of a Gunn-diode current-pulse generator for modulation of semiconductor lasers. Moreover as the GaAs is a poor conductor, Gunn diodes generate excessive heat and thus are usually provided with a heat sink. In parametric amplifiers as pump sources. P-N Junction Diode. 5.2 (b), where Cj and – Rj are the diode capacitance and resistance, respectively, Rs includes the total resistance of lead, ohmic contacts, and bulk resistance of the diode, Cp and Lp are the package capacitance and inductance, The output power decreases with increase in frequency. 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A Gunn diode is a passive semiconductor device with two terminals, which composes of only an n-doped semiconductor material, unlike other diodes which consist of a p-n junction. Electrons are transferred from one valley in the conduction band to another valley. This diode is a negative differential resistance device, which is frequently used as a low-power oscillator to generate microwaves. A voltage variable capacitance of a reverse biased junction can be termed as a Varactor diode. On applying a DC voltage across the terminals of the Gunn diode, an electric field is developed across its layers, most of which appears across the central active region. Further it is to be noted that the transferred electron effect is also called Gunn effect and is named after John Battiscombe Gunn (J. BARITT Diode is usually used for Microwave Signal Generations of frequencies up to 25Ghz for Silicon (Si) Material and 90GHz for Gallium-Arsenide (GaAs). 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